The phase-shifting mask  consists of a  normal  transmission mask that has  been coated with  a transparent layer patterned  to ensure that  the optical phases of nearest apertures are opposite. Destructive interference  between waves from adjacent apertures cancels some dif- fractione  ffects and increases the spatialr  esolution with whichs  uch patterns can be projected. A simple theory predicts  a  near doubling of resolution for illumination  with  partial incoherence u < 0.3, and  sub- stantial improvements in resolution for u < 0.7. Initial  results obtained with a phase-shifting mask patterned with  typical device structures by electron-beaml  ithography and  exposed using a Mann 4800 1OX tool reveals a 40-percent increase in usuable  resolution  with some  structures printed at ar  esolution of 1000 lines/mm. Phase-shifting mask struc- tures  can be used to facilitate proximity  printing with larger gaps be- tween  mask and wafer. Theory indicates that the increase in resolution is accompanied by am  inimald  ecrease in depth of focus. Thus the phase-shifting mask may bet  hem  ost desirable device for enhancing optical  lithography  resolution in the VLSI/VHSIC era. 

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